smp3003 no. a1655-1/5 features ? on-resistance r ds (on)1=6.2m (typ.) ? input capacitance ciss=13400pf ? 4v drive speci cations absolute maximum ratings at ta=25c parameter symbol conditions ratings unit drain-to-source voltage v dss --75 v gate-to-source voltage v gss 20 v drain current (dc) i d --100 a drain current (pulse) i dp pw 10 s, duty cycle 1% --400 a allowable power dissipation p d tc=25 c 90 w channel temperature tch 150 c storage temperature tstg --55 to +150 c avalanche energy (single pulse) *1 e as 468 mj avalanche current *2 i av --60 a note : * 1 v dd =--48v, l=100 h, i av =--60a (fig.1) * 2 l 100 h, single pulse package dimensions unit : mm (typ) 7001-003 o1211 tkim tc-00002654/21710qa tkim tc-00002253 sanyo semiconductors data sheet smp3003 p-channel silicon mosfet general-purpose switching device applications http:// semicon.sanyo.com/en/network ordering number : ena1655a product & package information ? package : smp-fd ? jeita, jedec : sc-83, to-220smd sot-404, d2pak ? minimum packing quantity : 1000 pcs./reel packing type: dl marking electrical connection 10.2 8.8 1.5max 2.7 9.9 3.0 0.2 1.3 4.5 0.8 1.35 0.4 1.4 1.2 2.55 2.55 0 to 0.3 12 3 2.55 2.55 1 : gate 2 : drain 3 : source sanyo : smp-fd dl mp3003 lot no. 1 3 2
smp3003 no. a1655-2/5 electrical characteristics at ta=25c parameter symbol conditions ratings unit min typ max drain-to-source breakdown voltage v (br)dss i d =--1ma, v gs =0v --75 v zero-gate voltage drain current i dss v ds =--75v, v gs =0v --10 a gate-to-source leakage current i gss v gs =16v, v ds =0v 10 a cutoff voltage v gs (off) v ds =--10v, i d =--1ma --1.2 --2.6 v forward transfer admittance | yfs | v ds =--10v, i d =--50a 140 s static drain-to-source on-state resistance r ds (on)1 i d =--50a, v gs =--10v 6.2 8.0 m r ds (on)2 i d =--50a, v gs =--4v 8.0 11 m input capacitance ciss v ds =--20v, f=1mhz 13400 pf output capacitance coss 1000 pf reverse transfer capacitance crss 740 pf turn-on delay time t d (on) see fig.2 95 ns rise time t r 1000 ns turn-off delay time t d (off) 800 ns fall time t f 820 ns total gate charge qg v ds =--48v, v gs =--10v, i d =--100a 280 nc gate-to-source charge qgs 50 nc gate-to-drain ?miller? charge qgd 55 nc diode forward voltage v sd i s =--100a, v gs =0v --1.0 --1.5 v reverse recovery time t rr see fig.3 i s =--100a, v gs =0v, di/dt=--100a/ s 120 ns reverse recovery charge q rr 380 nc fig.1 avalanche resistance test circuit fig.2 switching time test circuit fig.3 reverse recovery time test circuit 50 0v --10v 50 rg v dd l smp3003 pw=10 s d.c. 1% p. g 50 g s d i d = --50a r l =0.96 v dd = --48v v out v in 0v --10v v in smp3003 v dd smp3003 l driver mosfet g s d
smp3003 no. a1655-3/5 drain-to-source voltage, v ds -- v drain current, i d -- a gate-to-source voltage, v gs -- v drain current, i d -- a static drain-to-source on-state resistance, r ds (on) -- m case temperature, tc -- c static drain-to-source on-state resistance, r ds (on) -- m drain current, i d -- a diode forward voltage, v sd -- v source current, i s -- a gate-to-source voltage, v gs -- v i d -- v ds i d -- v gs r ds (on) -- tc r ds (on) -- v gs i s -- v sd | y fs | -- i d forward transfer admittance, | y fs | -- s drain-to-source voltage, v ds -- v ciss, coss, crss -- pf ciss, coss, crss -- v ds it16502 it16499 --50 --25 150 0 --30 --10 --15 --20 --25 -- 5 100 1000 3 2 it16505 it16504 it16503 --0.1 --1.0 23 57 3 100 1000 --1.4 --1.2 --1.0 --0.8 --0.4 --0.2 --0.6 0 --0.01 --0.1 5 7 3 2 5 7 3 2 5 7 3 2 5 7 3 2 5 7 3 2 --1.0 --10 --100 --1000 7 5 7 5 3 2 3 10 0.1 1.0 7 5 2 3 7 5 2 2 10000 100000 2 2 --10 357 --100 57 23 0 25 50 75 100 125 3 5 7 3 2 5 7 5 7 75 c 25 c tc= --25 c --25 c tc=75 c i d = --50a single pulse single pulse tc=75 c 25 c --25 c tc= --25 c 25 c 75 c v ds = --10v tc=75 c 25 c --25 c v gs =0v single pulse ciss crss --0.2 --0.6 --0.4 --0.8 --1.0 --1.2 --2.0 --1.8 --1.6 --1.4 0 0 --20 --40 --200 --180 --160 --140 --120 --100 --80 --60 0 --20 --40 --200 --180 --160 --140 --120 --100 --80 --60 0 it16501 -- 3 0 --1 --2 --4 --5 --6 --7 --10 -- 8 -- 9 0 2 20 18 16 14 12 8 10 4 6 4 2 0 8 6 20 18 16 14 12 10 it16500 --0.5 --1.5 --2.0 --1.0 --2.5 --4.0 --4.5 --5.0 --3.5 --3.0 0 tc=25 c --4v v gs = --3v --10v v ds = --10v 25 c v gs = --4v, i d = --50a v gs = --10v, i d = --50a --8v coss --6v f=1mhz sw time -- i d drain current, i d -- a switching time, sw time -- ns --0.1 --1.0 23 57 2 --10 357 --100 57 23 it15359 100 1000 2 3 2 5 3 5 7 7 t d (off) v dd = --48v v gs = --10v t r t f t d (on)
smp3003 no. a1655-4/5 0 0 25 50 75 100 125 150 100 80 60 20 40 120 175 e as -- ta avalanche energy derating factor -- % ambient temperature, ta -- c it14184 it15361 a s o drain-to-source voltage, v ds -- v drain current, i d -- a p d -- tc allowable power dissipation, p d -- w case temperature, tc -- c 0 0 20 40 60 80 100 140 120 60 70 80 90 50 30 20 40 10 100 160 it15360 --0.1 --1.0 2 3 5 7 2 3 5 7 2 7 3 5 2 3 5 7 --10 --0.1 i dp = --400a i d = --100a 100 s 1ms 10ms 100ms dc operation operation in this area is limited by r ds (on). --1.0 23 57 2 --10 --100 357 2 2 357 10 s --100 --1000 tc=25 c single pulse pw 10 s total gate charge, qg -- nc gate-to-source voltage, v gs -- v v gs -- qg 0 50 200 150 250 100 350 300 0 -- 2 -- 4 -- 6 -- 1 -- 3 -- 5 -- 8 -- 7 -- 9 --10 v ds = --48v i d = --100a it16506
smp3003 no. a1655-5/5 ps this catalog provides information as of october, 2011. speci cations and information herein are subject to change without notice. note on usage : since the smp3003 is a mosfet product, please avoid using this device in the vicinity of highly charged objects. any and all sanyo semiconductor co.,ltd. products described or contained herein are, with regard to "standard application", intended for the use as general electronics equipment. the products mentioned herein shall not be intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee thereof. if you should intend to use our products for new introduction or other application different from current conditions on the usage of automotive device, communication device, office equipment, industrial equipment etc. , please consult with us about usage condition (temperature, operation time etc.) prior to the intended use. if there is no consultation or inquiry before the intended use, our customer shall be solely responsible for the use. specifications of any and all sanyo semiconductor co.,ltd. products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer ' s products or equipment. to verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer ' s products or equipment. sanyo semiconductor co.,ltd. assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all sanyo semiconductor co.,ltd. products described or contained herein. sanyo semiconductor co.,ltd. strives to supply high-quality high-reliability products, however, any and all semiconductor products fail or malfunction with some probability. it is possible that these probabilistic failures or malfunction could give rise to accidents or events that could endanger human lives, trouble that could give rise to smoke or fire, or accidents that could cause damage to other property. when designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. in the event that any or all sanyo semiconductor co.,ltd. products described or contained herein are controlled under any of applicable local export control laws and regulations, such products may require the export license from the authorities concerned in accordance with the above law. no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written consent of sanyo semiconductor co.,ltd. any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. when designing equipment, refer to the "delivery specification" for the sanyo semiconductor co.,ltd. product that you intend to use. upon using the technical information or products described herein, neither warranty nor license shall be granted with regard to intellectual property rights or any other rights of sanyo semiconductor co.,ltd. or any third party. sanyo semiconductor co.,ltd. shall not be liable for any claim or suits with regard to a third party's intellectual property rights which has resulted from the use of the technical information and products mentioned above.
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